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Category:Books about learning languages
Category:Arabic language
Category:Arabic grammar books1. Field of the Invention
The present invention relates to a semiconductor laser, and more particularly, to a semiconductor laser apparatus which includes a laser diode (LD) and a temperature controlling device which controls the temperature of a junction region between the LD and a substrate thereof.
2. Description of the Related Art
In the prior art, as illustrated in FIG. 6, a submount 80 having an electrically insulating property and a thermally conductive property is used as a heat sink to control the temperature of a junction region of a laser diode element 80a. The submount 80 is constituted so that the submount 80 is made of a ceramic material such as aluminum nitride, alumina, zirconia, aluminum titanate, or silicon carbide, and has a heat radiating characteristic at high temperatures. The submount 80 is provided with a cap 82 to shield the junction region of the laser diode element 80a. The submount 80 is mounted on a supporting base 81 made of copper or the like. When laser light is emitted from the laser diode element 80a, the junction region of the laser diode element 80a is supported by the submount 80, and heat generated from the junction region is radiated through the submount 80.
Meanwhile, a thermocouple element 83 is disposed at a junction region of the laser diode element 80a to control the temperature of the junction region of the laser diode element 80a. The thermocouple element 83 is used to measure a temperature of a junction region of the laser diode element 80a in a temperature controlling device. As the measuring result of the temperature of the junction region of the laser diode element 80a is converted into a voltage value, it is used to control the temperature of the junction region of the laser diode element 80a. The thermocouple element 83 is provided on the supporting base 81 so that the thermocouple element 83 and the supporting base 81 are connected by a solder 84 to constitute a thermocouple device 85.
FIG. 7 illustrates a thermal junction state between the submount 80 and the supporting base 81. The laser light emitted from the laser diode element 80a is reflected by the cap 82 and then is emitted to the submount 80 through the supporting base 81. When the temperature of the submount 80 is increased by heat generated from the laser diode element 82fe58eafd

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