Dmelect 2012 Descargar 57 39
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] should be mentioned that the use of a wafer scale dispersion method, which excludes the involvement of highly toxic chemicals and the associated cost and time, allowed for easier handling of the device and its operation.
Conclusion {#Sec6}
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In summary, this research demonstrated a feasible method of fabricating high-quality surface-confined heterojunction layers with different device structure including n-MOS, p-MOS and a-CS-JBS-PbS-MOS (a-CS-JBS/PbS/a-CS-JBS-PbS-MOS) on a single substrate. Under the conditions used in this study, the fabrication process is compatible with the standard CMOS processes, with processing steps being completed on a single substrate and achieving an excellent control of the heterojunction thickness. It also offers an effective approach for fabricating perovskite-based MOS sensors with the ability to be integrated with CMOS processes. The fabricated n-MOS, p-MOS and a-CS-JBS-PbS-MOS devices exhibited a device operational mechanism that can be described as the movement of carriers induced by the electric field in the surface-confined heterojunction layer and induced by the strong electric field in the perovskite film. It was shown that a-CS-JBS-PbS-MOS devices can be an alternative to the conventional MOS devices in the operation of perovskite-based MOS sensors. Furthermore, an improvement in the responsivity of p-MOS and a-CS-JBS-PbS-MOS devices was achieved by the optimization of the heterojunction thickness. The addition of a gold thin layer in the heterojunction layer is beneficial for improving the efficiency of electron transport and charge collection, which is achieved through the reduction of the surface recombination at the heterojunction layer-silicon
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