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Category:Windows XP1. Field of the Invention
This invention relates to the processing of semiconductor substrates, such as wafers and the like, and more particularly to a method and apparatus for processing a semiconductor substrate using a mist-free chemical vapor deposition process.
2. Description of the Prior Art
Plasma etching is a widely used technique for selectively etching materials deposited on a substrate, such as a wafer. The plasma etching is typically accomplished by providing a source gas containing ions to the substrate in a processing chamber and allowing the ions to react with the substrate surface. The reaction byproduct resulting from the plasma etching is typically removed from the processing chamber by a carrier gas.
However, conventional plasma etching processes suffer from several drawbacks, the most severe being the production of impurities in the process chamber that can contaminate the substrate being etched. In addition, conventional plasma etching processes can etch the substrate material and the chamber material at the same rate which results in a loss of selectivity of the substrate etch rate to the chamber material. This can significantly increase the cost and time required for completing the etch process.
Chemical vapor deposition is also a well known technique used for depositing material on a substrate. Chemical vapor deposition can be accomplished in a variety of ways, including sublimation, thermal evaporation, and low pressure
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