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1. Field of the Invention
This invention relates to the field of frequency division multiplexing using monolithically integrated, tunable, and non-linear, frequency mixing elements.
2. Description of the Prior Art
Monolithically integrated, tunable, and non-linear frequency mixing elements can be used in a variety of applications such as high-frequency communication systems. The phase matching, or tuning characteristics, of the non-linear element may be a critical parameter in applications such as frequency division multiplexing.
Conventionally, non-linear devices such as semiconductor lasers, electro-optic modulators, and electro-optic phase modulators are specified by the negative effective refractive index which is a positive effective refractive index less a negative parameter related to the frequency of operation.
Several different methods of measuring the negative effective refractive index, n.sub.eff, of a non-linear element are used in the literature. Many of these methods are not suitable for the measurement of semiconductor laser devices. In addition, conventional methods are destructive methods that require a clean semiconductor sample to be processed.
U.S. Pat. No. 5,473,701 to Yoshida et al, issued on Dec. 5, 1995, discloses a method of measuring the negative effective refractive index, n.sub.eff, of a semiconductor laser device using a thin film interference element.
U.S. Pat. No. 5,309,093 to Chen et al, issued on May 3, 1994, discloses a method of measuring the negative effective refractive index, n.sub.eff, of a semiconductor laser using an optical fiber formed in a semiconductor structure.
U.S. Pat. No. 5,315,441 to Bando et al, issued on May 24, 1994, discloses a method of measuring the negative effective refractive index, n.sub.eff, of a semiconductor laser using a Michelson interferometer.
U.S. Pat. No. 5
44926395d7

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